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The RGW80TS65DHRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package and operates with a collector-emitter maximum voltage (VCEO) of 650 V. The device supports a continuous collector current of 40 A at 25°C, with a typical collector-emitter saturation voltage of 1.9 V. Maximum power dissipation is rated at 214 W. It functions within a temperature range of -40°C to +175°C and holds AEC-Q101 automotive qualification.
Verify the exact part number suffix against official ROHM documentation, as distributor listings may contain typos or generic placeholders. Confirm RoHS compliance status and specific tube packaging quantities directly with the manufacturer or authorized agents before ordering.
Select this component for high-efficiency applications requiring low conduction losses and fast switching speeds. Ensure thermal management design accommodates the 214 W dissipation rating. Verify that the 650 V blocking voltage meets the system's peak voltage requirements under all operating conditions.
This device belongs to the RGT/RGW series, which balances low conduction loss with high-speed switching capabilities. The 'W' designation typically indicates high-speed fast switching characteristics within the ROHM portfolio, designed to reduce switching losses and voltage overshoot in hard-switching applications.
Direct substitutes include the RGW80TS65EHRC11 and RGW80TS65HRC11 from the same manufacturer. These alternatives share similar packages and ratings but may differ in saturation voltage or switching times. Always consult the latest datasheets to verify pin compatibility and electrical parameter overlaps.