RGW80TS65EHRC11

$7.61

Description：IGBT TRENCH FS 650V 80A TO-247N
Series：-

SKU:389d5f53635d Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247N
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
Power - Max：214 W
Switching Energy：-
Input Type：Standard
Gate Charge：110 nC
Td (on/off) @ 25°C：43ns/148ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：86 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247N
Grade：-
Qualification：-

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RGW80TS65EHRC11

Overview

The RGW80TS65EHRC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power switching applications. It features an integrated Fast Recovery Diode (FRD) and operates within a collector-emitter voltage range of up to 650 V. The device supports a continuous collector current of 80 A at 25°C and handles a maximum power dissipation of 214 W. Key electrical parameters include a collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 200 nA, and a maximum gate-emitter voltage of 30 V. It functions reliably across a temperature range from -40°C to +175°C junction temperature.

Feature Summary

Field Stop Trench technology enables low conduction loss and fast switching characteristics.
Integrated FRD provides soft recovery behavior to reduce switching noise and voltage overshoot.
High short-circuit robustness suitable for demanding automotive and industrial environments.

Applications

On-board chargers (OBC)
Totem-pole PFC circuits
DC/DC converters
Industrial motor drives

Procurement Notes

Verify the specific suffix C11 against the official datasheet to confirm tube packaging and automotive grade compliance. Ensure the ordering code matches the exact RoHS status and lead-free plating requirements specified in the manufacturer's documentation before finalizing procurement.

Selection Notes

Select this component when designing systems requiring high-speed switching with integrated freewheeling diodes. Compare the 1.9 V saturation voltage and 80 A current rating against thermal management capabilities. Verify that the 650 V breakdown voltage aligns with the system's DC bus requirements and transient voltage spikes.

Part Context

This part belongs to the RGW series of Field Stop Trench IGBTs from ROHM Semiconductor. The series is characterized by optimized trade-offs between conduction and switching losses. It is distinct from the RGA and RGS series which target different short-circuit tolerance profiles or rectification applications.

Replacement Considerations

Check for direct substitutes within the RGW series such as RGW80TS65EHR. Verify pin compatibility and electrical parameter equivalence in the official datasheets before substitution.

FAQ

What is the minimum short-circuit withstand time for this device?

The RGW80TS65EHRC11 is designed with high short-circuit robustness typical of the RGW series, supporting operation in harsh fault conditions common in automotive inverters.