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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 104A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：104 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
- Power - Max：288 W
- Switching Energy：1.43mJ (on), 1.2mJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：55ns/180ns
- Test Condition：400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：88 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
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Overview
The RGWSX2TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247GE package. It features an integrated Fast Recovery Diode (FRD) and supports through-hole mounting. Key electrical parameters include a collector-emitter voltage of 650 V, a continuous collector current of 60 A at 100°C, and a typical collector-emitter saturation voltage of 1.6 V. The device exhibits a typical fall time of 38 ns and a maximum power dissipation of 288 W. It operates within a temperature range of -55°C to 175°C storage and complies with RoHS standards.
Feature Summary
- High-speed switching capability designed for efficient power conversion
- Integrated very fast and soft recovery FRD reduces circuit complexity
- Low collector-emitter saturation voltage minimizes conduction losses
- Soft switching characteristics reduce voltage overshoot during operation
Applications
- Power Factor Correction (PFC) circuits
- Solar converters and photovoltaic inverters
- Medium to high-speed switching frequency converters
Procurement Notes
Verify the specific suffix GC13 against official datasheets to confirm tube packaging and lead plating specifications. Ensure the TO-247GE footprint matches the target PCB design. Confirm RoHS compliance status directly from the manufacturer's latest documentation before finalizing procurement plans.
Selection Notes
Select this component for applications requiring high-speed switching combined with low conduction losses. The integrated FRD simplifies design compared to discrete diode solutions. Verify thermal management requirements given the 288 W power dissipation rating and ensure gate drive voltages remain within the specified limits for optimal performance.
Part Context
This part belongs to the RGWS series of Field Stop Trench IGBTs from ROHM Semiconductor. The series is characterized by cost-effective high-speed switching technology. It is distinct from standard trench IGBTs by its optimized trade-off between conduction and switching losses, targeting efficiency improvements in modern power electronics.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Evaluate alternatives based on matching 650V rating, 60A current capacity, TO-247GE package, and integrated FRD functionality. Verify pinout compatibility and thermal resistance values before considering any cross-references.
