ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 132A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：132 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 75A
- Power - Max：348 W
- Switching Energy：2.39mJ (on), 1.68mJ (off)
- Input Type：Standard
- Gate Charge：213 nC
- Td (on/off) @ 25°C：64ns/229ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：101 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
Download product information
Overview
The RGWX5TS65DGC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a 650 V collector-emitter breakdown voltage and supports a continuous collector current of 75 A at 25°C, with a pulsed current rating of 132 A. The device exhibits a typical collector-emitter saturation voltage of 1.5 V and incorporates a built-in fast recovery diode (FRD) with a typical reverse recovery time of 31 ns. Packaged in a TO-247N-3 through-hole housing, it handles up to 348 W of power dissipation and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Integrates a very fast and soft recovery FRD to minimize switching losses and electromagnetic interference.
- Utilizes trench gate field stop technology to achieve low collector-emitter saturation voltage and enhanced thermal performance.
- Provides high-speed switching capabilities suitable for efficient power conversion systems.
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters and photovoltaic systems
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the component status before integration, as sourcing information indicates this specific part number may be classified as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors and ensure the received units match the exact suffix GC11 to guarantee correct packaging and RoHS compliance specifications.
Selection Notes
Select this component when designing systems requiring a balance between low conduction loss and rapid switching speed. The integrated FRD simplifies circuit topology by eliminating the need for external anti-parallel diodes. Ensure the thermal management design accommodates the 348 W power dissipation rating and that the gate drive voltage remains within the specified ±30 V limits.
Part Context
This device belongs to the RGW series of high-speed IGBTs from ROHM Semiconductor. The series is characterized by its use of trench gate field stop technology to optimize switching performance. The RGWX5TS65DGC11 specifically targets industrial and consumer power electronics where efficiency and compact design are critical requirements.
Replacement Considerations
Direct substitutes include other ROHM parts within the same series such as the RGW80TS65DGC11 or RGW60TS65DGC11, which share similar packages and electrical characteristics but differ in current ratings. Cross-brand replacements require careful verification of pinout compatibility, saturation voltage, and reverse recovery times.
