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The RGWX5TS65GC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power conversion. It features a 650V collector-emitter voltage rating and supports a continuous collector current of 75A at 25°C. The device utilizes a TO-247N-3 through-hole package with a maximum power dissipation of 348W. Key electrical parameters include a typical collector-emitter saturation voltage of 1.5V and a gate-emitter leakage current of 200nA. It operates within a temperature range of -40°C to +175°C and incorporates built-in fast recovery freewheeling diode characteristics.
Verify the specific suffix GC13 against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component meets all environmental and safety standards required for the target application before procurement.
Select this component for applications requiring high-speed switching and low conduction losses in the 650V class. Compare the 75A current rating and 1.5V Vce(sat) against system thermal requirements. Consider the TO-247N-3 package for adequate heat dissipation in through-hole designs. Evaluate the integrated FRD performance if synchronous rectification is not used.
This part belongs to the RGW series of high-speed IGBTs from ROHM Semiconductor. The series is characterized by trench gate field stop technology, offering improved switching efficiency compared to standard planar devices. It is positioned as a key component for modern energy-efficient power electronics, balancing speed and conduction loss.
Check for direct pin-compatible alternatives within the same ROHM RGW family, such as RGWX5TS65GC11, ensuring voltage and current ratings match. Verify that any substitute maintains the same TO-247N-3 package and thermal characteristics. Cross-reference switching speeds and diode recovery times to ensure circuit stability.