ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
RJ1N10BBHTL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 80V 235A, TO-263AB, POWER MO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJ1N10BBHTL1
- Description：NCH 80V 235A, TO-263AB, POWER MO
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：185 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11800 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：189W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for RJ1N10BBHTL1
Single FETs, MOSFETs Overview
The RJ1N10BBHTL1 is an N-channel power MOSFET manufactured by ROHM Semiconductor, housed in a TO-263AB surface-mount package. It features a drain-source voltage rating of 80 V and a continuous drain current capacity of 235 A. The device exhibits a typical on-resistance (Rds(on)) ranging from 1.66 to 2.70 mΩ at Vgs = 10 V. Key electrical parameters include a gate charge of approximately 80 nC and a maximum power dissipation of 189 W. The component operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high-efficiency power switching applications
- High current handling capability suitable for heavy-duty loads
- Robust thermal performance with high power dissipation rating
Single FETs, MOSFETs Applications
- Motor drive circuits
- DC/DC converter systems
- General power switching modules
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before integration. Confirm that the TO-263AB package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 189 W power dissipation under actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V N-channel MOSFET with high current capacity is required. Compare Rds(on) values against system efficiency targets. Consider the TO-263AB package for its balance of current handling and thermal performance in surface-mount designs requiring robust power delivery.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's RJ1 series of N-channel power MOSFETs designed for high-current applications. The series utilizes silicon technology to achieve low on-resistance and high breakdown voltage ratings. These devices are engineered for use in industrial and automotive-grade power electronics where reliability and thermal stability are critical.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same voltage and current class. Verify that substitute components meet or exceed the 80 V Vds and 235 A Id specifications. Ensure thermal resistance characteristics are comparable to maintain existing cooling solution effectiveness.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
