RJH1BF6RDPQ-80#T2

$7.07

Description：IGBT 1100V 55A TO-247
Series：-

SKU:eda35fbbb5b9 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 1100V 55A TO-247
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1100 V
Current - Collector (Ic) (Max)：55 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 55A
Power - Max：227.2 W
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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RJH1BF6RDPQ-80#T2

Overview

The RJH1BF6RDPQ-80#T2 is a single Silicon N-channel IGBT manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 1100V and a maximum continuous collector current of 55A. The device has a maximum power dissipation of 250W and a typical on-state collector-emitter voltage of 2.4V at 15V gate drive and 35A collector current. It operates within a junction temperature range up to 150°C and is housed in a TO-247-3 through-hole package.

Feature Summary

High voltage blocking capability suitable for industrial power switching applications
Robust thermal performance with a maximum junction temperature of 150°C
Standard gate input type for straightforward driver integration

Applications

Industrial motor drives
Power supply inverters
AC/DC converters

Procurement Notes

This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability should focus on distributor surplus stock or approved substitute part numbers. Ensure that any replacement components meet the original electrical specifications, including the 1100V rating and TO-247-3 package dimensions, to maintain system integrity.

Selection Notes

Select this IGBT for applications requiring high voltage isolation and moderate current handling in a through-hole configuration. The standard gate input simplifies driver circuit design compared to specialized gate types. Consider the 250W power dissipation limit when designing heatsinking solutions for continuous operation.

Part Context

The RJH1BF6RDPQ-80#T2 belongs to the RJH1CF7 series of silicon N-channel IGBTs from Renesas. These devices are designed for general-purpose power switching, offering a balance between switching speed and conduction losses. The series utilizes advanced trench gate technology to achieve low on-state voltage while maintaining high voltage robustness.