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The RJH1CF5RDPQ-80#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 60 A. The device has a maximum power dissipation capacity of 250 W at a case temperature of 25°C. It is designed for through-hole mounting in a TO-247 package with three terminals. The component operates with a standard input type and supports junction temperatures up to 150°C.
Verify part authenticity via manufacturer documentation as this specific model may be subject to obsolescence notices. Confirm RoHS3 compliance status and check for Product Change Notifications regarding assembly site transfers or labeling updates before integration into production designs.
Select this component when a 1200V, 60A IGBT is required for high-power applications. Ensure the design accommodates the 250W power dissipation limit and utilizes appropriate heatsinking for the TO-247 package. Verify that the operating junction temperature remains within the specified 150°C maximum limit during all operational conditions.
This IGBT belongs to the RJH1CF7 series family from Renesas. It shares similar electrical characteristics with other variants in the lineup but is distinguished by its specific suffix indicating the tape-and-reel packaging configuration. The component is categorized under discrete semiconductors and transistors.
Check for direct substitutes within the same RJH1CF series. Verify pinout compatibility and electrical ratings match exactly. Consult official datasheets for any functional differences between legacy and replacement parts.