ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH 1200V 70A TO-3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 35A
- Power - Max：320 W
- Switching Energy：3.2mJ (on), 2.5mJ (off)
- Input Type：Standard
- Gate Charge：166 nC
- Td (on/off) @ 25°C：53ns/185ns
- Test Condition：600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：200 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
Download product information
Overview
The RJH1CV7DPK-00#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 90 A at 25°C. The device utilizes a TO-3P package for through-hole mounting, supporting a maximum power dissipation of 300 W. Key electrical characteristics include a saturation voltage of 2.4 V at 50 A with a 15 V gate drive, a total gate charge of 130 nC, and switching times of 60 ns (turn-on) and 190 ns (turn-off).
Feature Summary
- High-voltage trench-gate IGBT technology designed for efficient power switching.
- Robust thermal performance in a standard TO-3P through-hole package.
- Optimized switching characteristics for high-frequency inverter applications.
Applications
- Three-level inverter systems
- Full bridge converter topologies
- Industrial welding equipment
Procurement Notes
Verify the specific suffix #T0 against official Renesas documentation to confirm packaging details, as ordering suffixes may indicate variations in tape-and-reel specifications or labeling updates. Confirm component status, as this part number has been subject to End-of-Life notices. Ensure compliance with RoHS3 standards during procurement.
Selection Notes
Select this component for designs requiring 1200 V blocking capability and 90 A current handling in a TO-3P form factor. Compare the 2.4 V saturation voltage and 130 nC gate charge against alternative trench-gate IGBTs like the RJP/H60Dx series if pin compatibility or thermal resistance requirements differ. Validate that the 300 W power dissipation rating meets the thermal management constraints of the target application.
Part Context
This IGBT belongs to the 1200 V trench-gate family, which includes variants such as RJH1CMx and RJP1CSx. These devices are commonly grouped in Renesas solutions for three-level inverters and full bridge converters. The RJH1CV7DPK-00#T0 shares functional similarities with other 90 A, 1200 V trench IGBTs but is distinct in its specific package and electrical parameter set.
Replacement Considerations
Publicly confirmed substitute part numbers for RJH1CV7DPK-00#T0 were not found in the provided source material. Consult Renesas technical support for direct replacements within the 1200 V trench IGBT portfolio.
