RJH1CV7DPQ-E0#T2

$5.11

Description：IGBT TRENCH 1200V 70A TO-247
Series：-

SKU:32c276c757e7 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 70A TO-247
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 35A
Power - Max：320 W
Switching Energy：3.2mJ (on), 2.5mJ (off)
Input Type：Standard
Gate Charge：166 nC
Td (on/off) @ 25°C：53ns/185ns
Test Condition：600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)：200 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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RJH1CV7DPQ-E0#T2

Overview

The RJH1CV7DPQ-E0#T2 is a trench IGBT transistor manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 1200 V and a maximum collector current of 70 A. The device is housed in a TO-247 package with a maximum power dissipation of 320 W. It operates at a junction temperature up to 150°C and utilizes standard input type configuration.

Feature Summary

Trench field-stop technology for low on-state voltage
High switching speed capability
Robust short-circuit withstand time

Applications

Inverter applications
Motor drives
Power supplies

Procurement Notes

Verify the exact suffix #T2 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the specific voltage and current ratings required for your design, as minor suffix variations may indicate different packaging or testing criteria.

Selection Notes

Select this component for high-voltage inverter designs requiring robust switching performance. Consider the thermal management requirements associated with the TO-247 package and 320 W power dissipation rating when designing the heat sink interface.

Part Context

This IGBT belongs to Renesas's trench technology family, designed for efficient power conversion. It complements other high-voltage discrete semiconductors in industrial and automotive power electronics portfolios, offering improved efficiency over older planar technologies.