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Product Detailed Parameters
- Description：IGBT 1350V 60A TO-247
- Series：-
- Mfr：Renesas
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 35A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：58ns/144ns
- Test Condition：600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The RJH1DF7RDPQ-80#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 60 A. The device has a maximum power dissipation rating of 250 W at an ambient temperature of 25°C. The saturation voltage is specified as 2.4 V maximum when the gate-emitter voltage is 15 V and the collector current is 35 A. It operates within a junction temperature range up to 150°C and is housed in a TO-247-3 through-hole package.
Feature Summary
- High-voltage capability with 1200 V collector-emitter breakdown for robust operation in demanding power environments.
- Low saturation voltage design to minimize conduction losses and improve overall system efficiency.
- Through-hole mounting configuration providing secure mechanical attachment for high-power applications.
Applications
- Solar power generator power conditioners
- Industrial motor drives
- High-voltage power converters
Procurement Notes
This component is officially listed as obsolete or end-of-life, with a notification dated December 15, 2022. Verification of availability should focus on existing stock from authorized distributors rather than new production orders. Ensure that any sourced units match the specific suffix #T2 for tape and reel packaging if required by assembly equipment. Confirm RoHS3 compliance status directly with the supplier prior to procurement.
Selection Notes
Designers requiring this specific 1200V, 60A specification should verify if the newer seventh-generation IGBT series, such as the RJP1CS series, offers improved performance metrics for similar voltage and current requirements. The selection process must account for the thermal management needs associated with a 250W dissipation rating in a TO-247 package. Consider the transition timeline given the product's discontinued status to ensure long-term supply chain stability for the final equipment.
Part Context
The RJH1DF7RDPQ-80#T2 belongs to the broader category of discrete semiconductor transistors, specifically single IGBTs designed for high-power switching. It is part of Renesas' portfolio aimed at industrial and energy conversion applications. The device utilizes standard input types and is packaged in a TO-247-3 format, which is common for medium-to-high power modules requiring reliable thermal dissipation and mechanical durability in industrial settings.
Replacement Considerations
Public documentation indicates that the RX230 Group is recommended for new designs in place of older H8S microcontrollers, but no direct public substitute part numbers are explicitly confirmed for this specific IGBT model in the provided source material. Engineers should consult Renesas for current equivalents within the seventh-generation lineup.
