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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RJH30E3DPK-M0#T2 is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 30V and a continuous drain current capacity of 30A. The device utilizes the WPAK package, which supports high-density mounting on printed circuit boards. Key electrical characteristics include a low on-resistance to minimize conduction losses during operation. The component is designed for applications requiring efficient switching performance in motor drive and load switch circuits.
Feature Summary
- P-channel configuration suitable for high-side switching applications
- Low on-resistance for improved efficiency and reduced heat generation
- High-speed switching capability for responsive control
- Robust construction with lead-free and halogen-free compliance
Applications
- Motor driver circuits
- Load switch implementations
- Power management systems
Procurement Notes
Verify the specific suffix T2 indicates tape and reel packaging when sourcing. Confirm RoHS3 compliance status through official documentation. Check for last-time buy notifications as availability may be limited. Ensure the supplier provides genuine Renesas Electronics Corporation components to avoid counterfeits. Validate the part number against the manufacturer's official database before ordering.
Selection Notes
Select this component for designs requiring a 30V P-channel MOSFET with 30A current handling. The WPAK package is appropriate for space-constrained layouts. Consider thermal management requirements based on the expected duty cycle and ambient temperature. Compare on-resistance values against alternative devices to ensure optimal efficiency for the specific application load.
Part Context
This part belongs to Renesas' power MOSFET portfolio, specifically the N-channel and P-channel series designed for general-purpose switching. The WPAK package family offers compact footprints for modern electronics. These devices are engineered to balance performance, reliability, and cost-effectiveness for industrial and consumer applications.
Replacement Considerations
RJK03M5DPA is listed as an alternative N-channel option from Renesas but differs in channel type. Verify pin compatibility and electrical parameters before substitution. No direct P-channel equivalent is confirmed in the provided data.
