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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJH30E3DPK-M2#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes Trench gate technology from the G5H series to achieve low collector-to-emitter saturation voltage, specified at 1.6 V typical, and high-speed switching with a turn-off time of 150 ns typical. The component is housed in a TO-3P package and is currently active in production.
Feature Summary
- Utilizes G5H series Trench gate technology for enhanced performance
- Achieves low collector-to-emitter saturation voltage
- Provides high-speed switching capabilities
Applications
Procurement Notes
Verify the manufacturer part number RJH30E3DPK-M2#T2 against official Renesas documentation to confirm authenticity. Ensure the TO-3P package matches design requirements. Check RoHS compliance status as indicated in specific datasheets, noting that some distributor listings may lack this data. Confirm the component is in the active state before procurement.
Selection Notes
Select this IGBT when low saturation voltage and fast switching are critical for power efficiency. The TO-3P package suits applications requiring robust thermal management. Consider the G5H series characteristics for designs needing reduced conduction losses. Validate electrical parameters against specific circuit demands using the official datasheet.
Part Context
This component belongs to the Renesas IGBT family, specifically utilizing the G5H series technology. It is a single N-channel device designed for power switching applications. The TO-3P package provides mechanical stability and thermal dissipation capabilities suitable for industrial and automotive power electronics systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official Renesas cross-reference guides or authorized distributors for verified alternatives if direct replacement is required.
