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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJH30H2DPK-M2#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate and thin wafer technology, characteristic of the G6H-II series. The device features a low collector-to-emitter saturation voltage of 1.4 V typical. It is designed for high-power switching applications requiring efficient thermal management and robust performance in industrial environments.
Feature Summary
- Utilizes trench gate and thin wafer technology for enhanced efficiency
- Features low collector to emitter saturation voltage for reduced conduction losses
- Designed as a single IGBT for high-power switching applications
Applications
- High-power switching circuits
- Industrial motor drives
- Power supply systems
Procurement Notes
Verify component authenticity through authorized distributors or official Renesas channels due to potential availability variations. Confirm package integrity and moisture sensitivity handling requirements upon receipt. Ensure storage conditions comply with manufacturer guidelines to maintain device reliability before assembly.
Selection Notes
Select this component for applications requiring low saturation voltage and high power density. Consider the TO-3P package for effective heat dissipation. Evaluate thermal resistance parameters against system cooling capabilities. Ensure gate drive compatibility with the specified voltage levels for optimal switching performance.
Part Context
This part belongs to the Renesas G6H-II series of IGBTs, which are engineered for high-efficiency power conversion. The series emphasizes reduced on-state voltage drop to improve overall system efficiency. It represents a specialized solution within the broader portfolio of power semiconductor devices offered by Renesas Electronics.
Replacement Considerations
Consult official Renesas documentation for qualified substitute parts. Verify pinout compatibility and electrical characteristics match before substitution. Generic replacements may not offer equivalent thermal or switching performance.
