RJH60D0DPK-00#T0

Overview

The Renesas RJH60D0DPK-00#T0 is a trench-type Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 45 A at 25°C. The device exhibits a typical on-state voltage drop of 2.2 V when driven at 15 V gate voltage with a 22 A collector current. Maximum power dissipation is rated at 140 W, supporting operation up to a junction temperature of 150°C. Switching performance includes turn-on and turn-off times of 40 ns and 80 ns respectively, under standard test conditions of 300 V and 22 A. The component utilizes a TO-3P through-hole package.

Feature Summary

• Utilizes trench technology to achieve low conduction losses and efficient switching characteristics.
• Designed for robust performance in inverter and motor control circuits requiring high current handling.
• Features a rugged TO-3P leaded package suitable for high-power thermal management.

Applications

• Uninterruptible Power Supply (UPS) systems
• Motor control drives
• Solar power generation inverters
• Welding equipment

Procurement Notes

Verify the End-of-Life (EOL) status before design finalization, as the manufacturer has issued a Product Change Notification indicating discontinuation. Confirm that alternative components are qualified for your specific application requirements. Ensure compatibility with existing PCB footprints if transitioning from previous revisions. Check for any recent Package Change Notifications regarding labeling or material updates. Validate supply chain availability for remaining stock or last-time buy options.

Selection Notes

Select this component for applications requiring a 600V IGBT with moderate current ratings around 45A. Consider the 2.2V saturation voltage for efficiency calculations in low-frequency switching scenarios. Evaluate the thermal resistance of the TO-3P package against your heatsinking capabilities. Compare switching energies against system constraints to ensure electromagnetic interference compliance. Verify gate drive voltage compatibility with the specified 15V test condition.

Part Context

This part belongs to the RJH60D series of trench IGBTs from Renesas Electronics. It shares architectural similarities with other devices in the family, such as the RJH60D7ADPK, which offers higher current capacity. The series is targeted at inverter applications operating within specific frequency ranges. It represents a legacy product line often found in established industrial designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Renesas official replacement guides or evaluate equivalent trench IGBTs from other manufacturers with matching 600V/45A specifications and TO-3P packaging.