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The Renesas RJH60D1DPP-E0#T2 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. It features a TO-220FL package with three terminals: gate, collector, and emitter. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C case temperature. Key electrical characteristics include a typical collector-to-emitter saturation voltage of 1.6 V at 22 A and a short-circuit withstand time of 5 µs. The gate-emitter voltage rating is ±30 V, ensuring robust operation in inverter circuits.
Verify the specific suffix E0#T2 against the manufacturer's official datasheet to confirm pinout and packaging details. Ensure compatibility with existing thermal management solutions given the TO-220FL form factor. Confirm that the application frequency range aligns with the component's design specifications for PFC or inverter use cases.
Select this IGBT for designs requiring 600V blocking capability and moderate current handling up to 16A. Consider the 5µs short-circuit tolerance when designing protection circuits. Evaluate thermal resistance requirements for the TO-220FL package under expected load conditions. Compare performance metrics against alternative models in the RJH series if higher current density is needed.
This component belongs to Renesas' IGBT product line intended for inverter applications. It is part of a family recommended for frequencies between 1 kHz and 50 kHz. The series is characterized by guaranteed short-circuit ruggedness, distinguishing it from non-guaranteed variants used in different power factor correction contexts.
Consult the official replacement guide for equivalent parts within the RJH60D1DPP series. Verify pin compatibility and thermal characteristics before substituting with other 600V IGBTs in the TO-220FL package.