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Product Detailed Parameters
- Description：IGBT TRENCH 600V 25A LDPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 12A
- Power - Max：63 W
- Switching Energy：100µJ (on), 160µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：32ns/85ns
- Test Condition：300V, 12A, 5Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-83
- Supplier Device Package：LDPAK
- Grade：-
- Qualification：-
Download product information
Overview
The RJH60D2DPE-00#J3 is a 600 V, 25 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It utilizes trench gate technology to achieve low saturation voltage and optimized switching performance. The device is housed in an LDPAK package with a thermal pad for efficient heat dissipation. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 25 A at 25°C. The typical saturation voltage is specified at 1.8 V under standard test conditions.
Feature Summary
- Trench gate structure for low conduction losses
- Integrated thermal pad for enhanced heat transfer
- Optimized for high-frequency inverter applications
Applications
- Power inverters for motor control systems
- Uninterruptible Power Supply (UPS) units
- Solar power generation inverters
- Welding equipment power stages
Procurement Notes
Verify the complete part number including the suffix -00#J3 to ensure correct packaging and tape-and-reel configuration. Confirm RoHS compliance status through official Renesas documentation prior to integration. Check for any recent Product Change Notices regarding pinout or material updates.
Selection Notes
Select this component for designs requiring a balance between low on-state voltage and fast switching speeds. Ensure the PCB layout supports the LDPAK package's thermal requirements. Verify that the gate drive voltage aligns with the specified operating range for optimal performance.
Part Context
This IGBT belongs to the RJH60D series designed for inverter applications. It is part of Renesas' portfolio for medium-power conversion systems. The series is characterized by reliability in industrial and consumer power electronics environments.
Replacement Considerations
Direct substitutes may include other 600V 25A trench IGBTs in similar packages from Renesas or other manufacturers. Verify pin compatibility and thermal resistance values before substitution.
