RJH60D2DPP-M0#T2

Overview

The RJH60D2DPP-M0#T2 is a silicon N-channel IGBT manufactured by Renesas Electronics Corporation. It is housed in a TO-220FL package and designed for high-speed power switching applications. The device features a collector-to-emitter voltage rating of 600 V and a continuous collector current capacity of 16 A at 25°C case temperature. Key electrical parameters include a typical short-circuit withstand time of 5 µs, a gate-to-emitter voltage rating of ±30 V, and a maximum junction temperature of 150°C. The component utilizes trench gate technology to achieve low saturation voltage characteristics suitable for inverter circuits.

Feature Summary

• Incorporates trench gate structure for optimized switching performance and reduced conduction losses.
• Provides robust short-circuit protection capability with a typical withstand time of 5 µs.
• Designed for high-speed power switching with low collector-to-emitter saturation voltage.

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supply (UPS) systems
• Solar power generation inverters
• Welding equipment power stages

Procurement Notes

Verify the specific ordering suffix #T2 against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure that the part number matches the exact electrical ratings required for the target application circuit design. Cross-reference the datasheet revision date to confirm compliance with current manufacturing standards and material declarations.

Selection Notes

Select this component for designs requiring a 600 V rated IGBT with a 16 A continuous current capability in a TO-220FL package. Consider the 5 µs short-circuit withstand time when designing protection logic for the driving circuitry. Evaluate the thermal impedance characteristics relative to the expected heat sink configuration to ensure operation within the 150°C junction temperature limit under maximum load conditions.

Part Context

This part belongs to the RJH60D series of trench-gate IGBTs from Renesas Electronics. The series is engineered for inverter applications operating in the 50 kHz to 100 kHz frequency range. It shares architectural similarities with other members like the RJH60D0DPK and RJP60D0DPP, differing primarily in current ratings and package configurations such as TO-3P or TO-220 variants.

Replacement Considerations

Potential substitutes include the RJH60D1DPP-M0#T2, which offers similar 600 V ratings but may differ in specific current handling or thermal characteristics. Verify pinout compatibility and absolute maximum ratings before substituting any alternative part numbers from the same product family.

FAQ

Is the RJH60D2DPP-M0#T2 guaranteed against short circuit?

Yes, the device features a typical short-circuit withstand time of 5 µs, providing protection against short-circuit events within this duration.

What is the recommended switching frequency range for this IGBT?

The RJH60D series is recommended for use in applications operating at frequencies between 50 kHz and 100 kHz.

Does this component support Pb-free lead plating?

Yes, the device includes Pb-free lead plating and chip bonding to comply with environmental regulations.