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Product Detailed Parameters
- Description：IGBT TRENCH 600V 35A LDPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 17A
- Power - Max：113 W
- Switching Energy：200µJ (on), 210µJ (off)
- Input Type：Standard
- Gate Charge：37 nC
- Td (on/off) @ 25°C：35ns/80ns
- Test Condition：300V, 17A, 5Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-83
- Supplier Device Package：LDPAK
- Grade：-
- Qualification：-
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Overview
The RJH60D3DPE-00#J3 is a single N-channel trench IGBT manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 35 A. The device is housed in an LDPAK-4 (SC-83) surface-mount package with four leads. Designed for high-power switching applications, it offers low on-state voltage characteristics typical of trench technology. The component is lead-free and RoHS compliant, suitable for environments requiring precise power control.
Feature Summary
- Trench gate architecture for optimized switching performance
- Single channel configuration for compact circuit design
- Surface-mount LDPAK-4 package for automated assembly
Applications
- Inverter circuits
- High-power switching modules
- Precision power control systems
Procurement Notes
Verify the exact suffix J3 against the manufacturer's official ordering information to confirm packaging and tape specifications. Ensure compatibility with LDPAK-4 footprint requirements during PCB layout. Confirm RoHS compliance status through current datasheets as regulatory standards may evolve. Cross-reference pinout diagrams to prevent installation errors in existing designs.
Selection Notes
Select this component when a 600V blocking capability and 35A current handling are required in a small surface-mount form factor. The trench IGBT structure provides advantages in switching speed compared to planar devices. Consider thermal management solutions appropriate for the LDPAK-4 package size. Evaluate gate drive requirements against the specific electrical characteristics provided in the official datasheet.
Part Context
This part belongs to the RJH60D series of silicon N-channel IGBTs from Renesas. The series includes various packages such as TO-3P and TO-220 variants. The D3DPE designation specifically indicates the LDPAK-4 package type. This family is engineered for robust performance in industrial and consumer power electronics applications requiring reliable high-voltage switching.
Replacement Considerations
Direct substitutes include other Renesas trench IGBTs in similar voltage and current ranges. Check package compatibility for LDPAK-4 or equivalent SC-83 footprints. Verify that alternative parts meet the same 600V and 35A ratings. Consult official replacement guides for end-of-life notifications within the product line.
