RJH60D3DPP-M0#T2

Description：IGBT TRENCH 600V 35A TO-220FL
Series：-

SKU:ce71a697c288 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 35A TO-220FL
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：35 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 17A
Power - Max：40 W
Switching Energy：200µJ (on), 210µJ (off)
Input Type：Standard
Gate Charge：37 nC
Td (on/off) @ 25°C：35ns/80ns
Test Condition：300V, 17A, 5Ohm, 15V
Reverse Recovery Time (trr)：100 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220FL
Grade：-
Qualification：-

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RJH60D3DPP-M0#T2

Overview

The RJH60D3DPP-M0#T2 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a TO-220FL three-pin through-hole package and operates with a drain-source breakdown voltage of 600 V and a continuous collector current of 35 A. The device has a maximum gate-emitter voltage of ±30 V, a threshold voltage of 4.5 V, and a typical gate charge of 19 nC. It supports a maximum operating temperature of +150°C with a power dissipation rating of 29 W.

Feature Summary

Utilizes trench gate and thin wafer technology for high efficiency
Integrates a built-in fast recovery diode with a typical reverse recovery time of 100 ns
Designed for high switching performance in power applications

Applications

High-efficiency power conversion systems
Motor control circuits requiring fast switching
Industrial power supply designs

Procurement Notes

This component is officially classified as obsolete and is no longer manufactured by Renesas Electronics. Verification of availability should focus on finding authorized substitutes or checking existing stock from third-party distributors. Ensure that any replacement part meets the original electrical specifications and package requirements to maintain system integrity.

Selection Notes

When selecting this IGBT, consider its 600V blocking capability and 35A current rating for medium-power applications. The integrated fast recovery diode simplifies circuit design by eliminating the need for external freewheeling diodes in certain topologies. Verify thermal management capabilities due to the 29W power dissipation limit in the TO-220FL package.

Part Context

The RJH60D3DPP-M0#T2 belongs to Renesas' high-voltage IGBT family, designed for robust performance in industrial and consumer electronics. It complements other power devices like the RJK6006DPP-A0#T2 MOSFET, offering different switching characteristics suitable for various power stages. This specific model represents a legacy solution now superseded by newer technologies.