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Product Detailed Parameters
- Description：IGBT TRENCH 600V 75A TO-247
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 37A
- Power - Max：200 W
- Switching Energy：400µJ (on), 810µJ (off)
- Input Type：Standard
- Gate Charge：78 nC
- Td (on/off) @ 25°C：50ns/130ns
- Test Condition：300V, 37A, 5Ohm, 15V
- Reverse Recovery Time (trr)：25 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The RJH60D5BDPQ-E0#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It belongs to the IGBT product series designed for inverter applications, including UPS, motor control, solar power generation, and welding. The device is recommended for operating frequencies between 1 kHz and 50 kHz and features short-circuit guarantee capabilities. It utilizes silicon technology and is housed in a tube package. The component has limited moisture sensitivity and is RoHS compliant.
Feature Summary
- Designed for high-frequency inverter operations up to 50 kHz
- Includes short-circuit protection guarantees
- Suitable for diverse power conversion systems
Applications
- Uninterruptible Power Supply (UPS)
- Motor Control Systems
- Solar Power Generation Inverters
- Welding Equipment
Procurement Notes
Verify current availability status directly with authorized distributors or the manufacturer, as supply conditions may be restricted. Confirm that the specific suffix matches the required packaging and qualification standards. Ensure compliance with local import regulations and RoHS directives before procurement. Check for any obsolescence notices or lifecycle changes affecting long-term support.
Selection Notes
Select this component for applications requiring robust performance in inverter circuits within the 1 to 50 kHz range. Ensure the system design accounts for the short-circuit withstand capability. Verify thermal management requirements align with the package's dissipation characteristics. Confirm compatibility with gate drive voltages and switching frequency constraints of the target application.
Part Context
This part is part of Renesas' specialized IGBT portfolio for power electronics. It shares functional similarities with other models in the RJH/RJP series but is distinct in its specific voltage ratings and package configuration. It serves as a key switching element in modern power conversion topologies.
Replacement Considerations
Consult official Renesas documentation for qualified substitute part numbers. Direct replacements must match electrical specifications, pinout configurations, and thermal characteristics. Generic equivalents are not recommended without rigorous validation against the original datasheet parameters.
