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Product Detailed Parameters
- Description：IGBT TRENCH 600V 90A TO-3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 50A
- Power - Max：300 W
- Switching Energy：1.1mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：60ns/190ns
- Test Condition：300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The RJH60D7ADPK-00#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A at 25°C. The device has a maximum power dissipation of 300 W and operates up to a junction temperature of 150°C. Key electrical parameters include a gate charge of 130 nC, a saturation voltage of 2.2 V at 15 V gate drive and 50 A collector current, and switching times of 60 ns turn-on and 190 ns turn-off. Reverse recovery time is 100 ns.
Feature Summary
- Utilizes trench gate technology for optimized switching performance
- Designed for high-power applications with robust thermal characteristics
- Standard input type configuration for compatibility with common driver circuits
Applications
- Inverter systems
- Uninterruptible Power Supplies (UPS)
- Motor control drives
- Solar power generation inverters
- Welding equipment
Procurement Notes
This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability should focus on remaining stock from authorized distributors or secondary market sources. Buyers must confirm the specific revision level and ensure compliance with RoHS3 standards before procurement. Lead times are not applicable due to discontinued status.
Selection Notes
Select this part for designs requiring a 600V, 90A IGBT in a TO-3P package. Ensure the driving circuit can supply the required 15V gate voltage to achieve the specified 2.2V saturation voltage. Verify that the system's thermal management can handle the 300W power dissipation at the expected operating junction temperature of 150°C.
Part Context
The RJH60D7 series is part of Renesas' portfolio of IGBTs designed for inverter applications. This specific model, RJH60D7ADPK-00#T0, represents the trench-gate variant packaged in a TO-3P case. It is intended for use in medium-frequency applications ranging from 1 to 50 kHz, offering a balance between conduction losses and switching speed.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct pin-to-pin replacements may require careful evaluation of electrical parameters such as Vce(sat), Qg, and switching times against the original specifications.
