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The RJH60D7BDPQ-E0#T2 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600V and a continuous collector current rating of 90A. The device is housed in a TO-247 package, suitable for through-hole mounting. Key electrical parameters include a maximum power dissipation of 300W at 25°C, a saturation voltage of 2.2V at 15V gate drive and 50A collector current, and a total switching energy of 700µJ. The component operates within a junction temperature range up to 150°C and complies with RoHS3 standards.
This specific part number is listed as obsolete and is no longer manufactured by Renesas Electronics Corporation. Procurement should focus on verifying the authenticity of remaining stock from authorized distributors or secondary market suppliers. Buyers must confirm the production date and storage conditions to ensure component integrity, as availability is limited and subject to existing inventory levels rather than active production runs.
Engineers selecting this component should consider its obsolete status when designing new products. The 600V, 90A specification and TO-247 form factor are critical constraints. Alternative solutions should be evaluated based on comparable voltage ratings, current handling capabilities, and thermal resistance characteristics. Compatibility with existing gate drive circuits and PCB layouts designed for the TO-247 package must be verified before substitution.
The RJH60D7BDPQ-E0#T2 belongs to the RJH60D7 series of IGBTs from Renesas, which are engineered for medium-to-high power conversion tasks. This series emphasizes low conduction losses and fast switching speeds, making it suitable for applications where efficiency and thermal management are paramount. The TO-247 package provides a balance between electrical performance and mechanical robustness for industrial-grade deployments.
As an obsolete component, direct replacements may require design adjustments. Potential substitutes should match the 600V Vces, 90A Ic, and TO-247 package dimensions. Verify that alternative IGBTs offer similar switching energy values and thermal characteristics to maintain system performance without modifying the existing heat sink or gate driver infrastructure.
The maximum power dissipation is 300W at an ambient temperature of 25°C.
No, this product is listed as obsolete and is no longer manufactured by Renesas Electronics Corporation.