RJH60D7DPM-00#T1

Overview

The RJH60D7DPM-00#T1 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A at 25°C. The device exhibits a typical on-state collector-emitter voltage of 2.2 V when tested at 15 V gate drive and 50 A collector current. Thermal performance includes a maximum power dissipation of 55 W and an operating junction temperature range up to 150°C. Switching characteristics are defined by turn-on and turn-off times of 60 ns and 190 ns, respectively, under standard test conditions of 300 V, 50 A, and 5 Ω gate resistance.

Feature Summary

• Utilizes trench gate technology for optimized switching performance and low conduction losses.
• Designed for through-hole mounting in the TO-3PFM package to facilitate thermal management.
• Standard input type compatible with common gate driver circuits.

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supply (UPS) systems
• Solar power generation inverters
• Welding equipment

Procurement Notes

This component is officially designated as obsolete by the manufacturer. Product Change Notifications indicate end-of-life status effective February 1, 2026. Verification of final availability requires direct consultation with authorized distributors or the manufacturer, as stock levels are not guaranteed. Designers should initiate replacement strategies immediately to ensure supply chain continuity for existing products.

Selection Notes

Select this IGBT for applications requiring high current handling up to 90 A and robust 600 V blocking capability. The TO-3PFM package is suitable for designs prioritizing mechanical stability and efficient heat sinking via through-hole mounting. Ensure gate drive voltages remain within specified limits to maintain the rated switching speeds and prevent excessive power dissipation during operation.

Part Context

The RJH60D7DPM-00#T1 belongs to the RJH60Dx series of trench-gate IGBTs from Renesas. This series is engineered for medium-to-high frequency switching applications, typically operating between 50 kHz and 100 kHz. It shares architectural similarities with other models in the RJP and RJQ families but offers specific current and voltage ratings tailored for industrial power conversion tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers must evaluate alternative IGBTs with matching 600V/90A ratings and TO-3PFM packaging from current production lines.