RJH60F0DPK-00#T0

Overview

The RJH60F0DPK-00#T0 is a trench-type Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 45 A at 25°C. The device operates with a maximum junction temperature of 150°C and dissipates up to 140 W of power. Key electrical parameters include a typical gate charge of 46 nC, an on-state collector-emitter voltage of 2.2 V at 15 V gate drive and 22 A collector current, and switching times of 40 ns for turn-on and 80 ns for turn-off. The component utilizes a TO-3P-3 (SC-65-3) through-hole package.

Feature Summary

• Utilizes trench technology for optimized switching performance and low conduction losses.
• Designed for robust operation in high-power switching applications with a 150°C maximum junction temperature rating.
• Packaged in a standard TO-3P-3 through-hole format suitable for industrial thermal management.

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supply (UPS) systems
• Solar power generation inverters
• Welding equipment

Procurement Notes

Verify availability status directly with the manufacturer or authorized distributors, as supply constraints may apply. Confirm RoHS compliance and moisture sensitivity levels prior to procurement. Ensure ordering suffixes match specific packaging requirements. Cross-reference datasheet revisions to confirm parameter consistency before finalizing purchase orders.

Selection Notes

Select this component for applications requiring 600V blocking capability and moderate current handling up to 45A. Consider the 2.2V saturation voltage for efficiency calculations at rated currents. Verify that the TO-3P package fits the mechanical constraints of the target design. Evaluate thermal resistance requirements against the 140W power dissipation limit under expected operating conditions.

Part Context

This part belongs to the RJH60D0 series of IGBTs designed for inverter applications. It shares the same core die and electrical characteristics as the RJH60D0DPK-00#T0 but may differ in packaging or specific manufacturing lot attributes. The series is targeted at frequencies between 50 kHz and 100 kHz for PFC and solar applications.

Replacement Considerations

The RJH60D0DPK-00#T0 is a confirmed substitute with identical electrical specifications and pinout. Both parts are trench-type IGBTs in TO-3P packages. Verify that any alternative replacements maintain the same 600V/45A ratings and switching speed characteristics to ensure circuit compatibility.