RJH60F7BDPQ-A0#T0

RJH60F7BDPQ-A0#T0

  • Description:IGBT TRENCH 600V 90A TO-247A
  • Series:-

SKU:978987a27390 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 90A TO-247A
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):90 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:1.75V @ 15V, 50A
  • Power - Max:328.9 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:63ns/142ns
  • Test Condition:400V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr):25 ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247A
  • Grade:-
  • Qualification:-

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RJH60F7BDPQ-A0#T0

Overview

The RJH60F7BDPQ-A0#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features an integrated fast recovery anti-parallel diode within a single TO-247A package. The device supports a collector-emitter breakdown voltage of 600V and a continuous collector current of 90A at 25°C, reducing to 50A at 100°C. Key electrical characteristics include a typical saturation voltage of 1.35V at 50A and a turn-off time of 74ns under standard test conditions.

Feature Summary

  • Utilizes trench gate and thin wafer technology for optimized switching performance
  • Integrates a high-speed fast recovery diode in a single package configuration
  • Designed for low on-state saturation voltage to minimize conduction losses

Applications

  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supply (UPS) systems
  • Solar power generation inverters
  • Welding equipment power stages

Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Check for any Product Change Notices regarding labeling or manufacturing site updates that may affect component traceability.

Selection Notes

Select this component for applications requiring high current handling with integrated freewheeling capabilities. Ensure the thermal management design accommodates the specified junction temperature limits. Verify that the gate drive circuitry matches the required voltage levels for optimal switching speed and saturation voltage performance.

Part Context

This part belongs to the RJH series of IGBTs designed for high-frequency inverter applications. It is distinct from similar models like the RJH60D7DPK which uses a TO-3P package. The RJH60F7BDPQ-A0 specifically targets industrial power conversion where compact packaging and integrated diode functionality are critical for system efficiency.

Replacement Considerations

Direct replacements must match the 600V/90A rating and TO-247A footprint. Consider the RJH60F7DPQ-A0 if available, noting potential differences in switching times. Any substitute must maintain comparable Vce(sat) and trr specifications to ensure circuit stability.

RJH60F7BDPQ-A0#T0RJH60F7BDPQ-A0#T0

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