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Product Detailed Parameters
- Description：IGBT TRENCH 650V 100A TO-247A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 50A
- Power - Max：375 W
- Switching Energy：1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：175 nC
- Td (on/off) @ 25°C：20ns/165ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：80 ns
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247A
- Grade：-
- Qualification：-
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Overview
The Renesas RJH65D27BDPQ-A0#T2 is a trench-type Insulated Gate Bipolar Transistor (IGBT) with an integrated Fast Recovery Diode (FRD). It features a maximum collector-emitter voltage of 650 V and a continuous collector current rating of 100 A. The device operates in a TO-247A through-hole package. Key electrical parameters include a typical saturation voltage of 1.3 V at 50 A, switching energy of 1 mJ (turn-on) and 1.5 mJ (turn-off), and a power dissipation capacity of 375 W.
Feature Summary
- Trench IGBT structure for low saturation voltage
- Integrated fast recovery diode configuration
- Optimized for high-frequency inverter applications
Applications
- Uninterruptible Power Supply (UPS) inverters
- Motor control systems
- Solar power generation inverters
- Welding equipment
Procurement Notes
Verify the specific suffix #T2 to confirm tube packaging and reel specifications. Ensure the ordering part number matches the required voltage and current ratings. Cross-reference the datasheet revision date to confirm parameter consistency. Confirm thermal resistance values match the intended heatsink design. Validate pinout compatibility with existing PCB footprints before procurement.
Selection Notes
Select this component for applications requiring 650 V blocking capability and up to 100 A continuous current. The integrated FRD simplifies circuit design by eliminating external diode requirements. Consider the 1.3 V typical saturation voltage for efficiency calculations. Verify that the operating frequency range aligns with the specified switching energy characteristics. Ensure the TO-247A package fits the mechanical constraints of the assembly.
Part Context
This device belongs to Renesas' IGBT product series designed for inverter applications. It is engineered for frequencies between 1 and 50 kHz. The series targets UPS, motor control, solar, and welding markets. The trench technology provides improved switching performance compared to planar types. The built-in FRD enhances system reliability and reduces component count.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal characteristics when considering alternative manufacturers. Ensure voltage and current ratings meet or exceed original specifications. Check switching energy parameters for compatibility with gate drive circuits.
