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Product Detailed Parameters
- Description：IGBT TRENCH 650V 100A TO-247A
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 50A
- Power - Max：250 W
- Switching Energy：1.3mJ (on), 1.2mJ (off)
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：38ns/125ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：250 ns
- Operating Temperature：175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247A
- Grade：-
- Qualification：-
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Overview
The RJH65T14DPQ-A0 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate and thin wafer technology to achieve high-speed switching characteristics suitable for demanding power conversion applications. The device features an integrated anti-parallel diode and is housed in a TO-247A package designed for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage of 1.8V at 20A and a typical turn-off time of 45ns under specified test conditions.
Feature Summary
- Optimized for induction heating and soft switching applications
- High-speed switching capability with low turn-off time
- Integrated anti-parallel diode for simplified circuit design
Applications
- Induction heating systems
- Soft switching power converters
- High-frequency inverter circuits
Procurement Notes
Verify the specific suffix against official Renesas documentation to confirm exact binning or testing variations. Confirm current product status as legacy or obsolete components may have limited availability. Ensure thermal management solutions match the TO-247A package requirements for reliable operation at rated currents.
Selection Notes
Select this component when high voltage blocking capability and high current handling are required in a single package. Consider the trade-off between switching speed and conduction losses inherent in trench gate technologies. Verify that the application frequency falls within the safe operating area defined in the datasheet.
Part Context
This IGBT belongs to Renesas' G7H series, which focuses on advanced trench gate structures for improved efficiency. It serves as a replacement for older generation IGBTs in industrial heating and power supply designs where higher switching frequencies and lower losses are critical for system performance.
Replacement Considerations
Direct pin-to-pin replacements should be verified against the official cross-reference list. Alternative devices must match the 650V rating, 50A current capacity, and TO-247A package form factor. Switching times and saturation voltages should be compared to ensure equivalent thermal performance.
