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RJJ0621DPP-0P#T2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is P-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RJJ0621DPP-0P#T2
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for RJJ0621DPP-0P#T2
Single FETs, MOSFETs Overview
The RJJ0621DPP-0P#T2 is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source breakdown voltage of 60V and a typical on-resistance (RDS(on)) of 95mΩ. The device supports a continuous drain current capability suitable for applications requiring up to 25W of power dissipation. It utilizes a three-terminal configuration designed for high-speed switching operations.
Single FETs, MOSFETs Feature Summary
- High-speed switching performance optimized for efficient power control
- Low on-resistance characteristic for reduced conduction losses
- Robust thermal management capabilities with high power dissipation rating
Single FETs, MOSFETs Applications
- General-purpose power switching circuits
- DC-DC converter topologies
- Motor driver interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix designation against official Renesas documentation to ensure exact electrical characteristics match your design requirements. Confirm package type and tape-and-reel specifications directly with authorized distributors or the manufacturer before placing orders to avoid compatibility issues.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with 60V voltage rating and low on-resistance is required. Ensure the application operates within the specified junction temperature limits and power dissipation constraints. Verify gate drive compatibility for optimal switching performance in high-speed environments.
Single FETs, MOSFETs Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically focusing on power management components. It serves as a fundamental building block for power electronics, complementing integrated circuits like gate drivers and PMICs by providing the final stage of power control in various industrial and consumer electronic systems.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and thermal characteristics to guarantee system reliability without redesign.
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