RJP3049DPK-80#T2

RJP3049DPK-80#T2

$4.77
  • Description:HIGH SPEED IGBT
  • Series:*

SKU:706d8b8b1e44 Category: Brand:

  
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Product Detailed Parameters

  • Description:HIGH SPEED IGBT
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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RJP3049DPK-80#T2

Overview

The RJP3049DPK-80#T2 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It belongs to the RJP3047DPK series and is designed for high-voltage switching applications. The component features a single IGBT chip integrated with a fast recovery anti-parallel diode in a single package configuration. This integration facilitates efficient power conversion and motor control circuits by minimizing parasitic inductance and simplifying thermal management requirements within compact system designs.

Feature Summary

  • Integrated fast recovery anti-parallel diode for efficient commutation
  • Single package configuration reducing circuit board space
  • High voltage blocking capability suitable for industrial power stages

Applications

  • Industrial motor drives
  • Switching power supplies
  • Inverter circuits

Procurement Notes

Verify the manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the suffix #T2 corresponds to the specific tape and reel packaging format required for automated assembly processes. Check for any recent product change notifications regarding pinout or electrical characteristics before finalizing procurement orders.

Selection Notes

Select this component when a combined IGBT and diode solution is required for high-voltage switching. Ensure the application voltage does not exceed the device's rated breakdown voltage. Evaluate the thermal resistance parameters to determine appropriate heatsinking solutions for the intended operating current and ambient temperature conditions.

Part Context

This device is part of the RJP3047DPK family, which includes similar high-voltage IGBT modules. The RJP3049DPK variant offers specific electrical characteristics tailored for robust performance in demanding power electronics environments. It serves as a critical active switching element in systems requiring reliable high-power handling capabilities.

Replacement Considerations

Direct replacements must match the pinout and electrical ratings of the RJP3047DPK series. Verify compatibility with existing gate drive circuits and thermal interface materials. Cross-reference with Renesas' official substitution guide for approved alternative part numbers.

RJP3049DPK-80#T2RJP3049DPK-80#T2
$4.77
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