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Product Detailed Parameters
- Description：HIGH SPEED IGBT, 300V, 40A
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP3065DPP-90#T2F is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. This component features a voltage rating of 300V and a continuous collector current capacity of 40A. It is designed for power applications requiring fast switching characteristics. The device is housed in a TO-220 package, suitable for through-hole mounting. The part number suffix #T2F indicates specific packaging or tape-and-reel configuration details provided by the manufacturer.
Feature Summary
- High-speed switching capability for efficient power conversion
- Robust 300V blocking voltage rating
- 40A continuous collector current handling
- TO-220 through-hole package for thermal management
Applications
- Power MOSFETs and IGBT modules for Plasma Display Panels (PDP)
- General purpose power switching circuits
- Inverter applications requiring high speed
Procurement Notes
Verify the exact datasheet version from Renesas Electronics Corporation to confirm electrical characteristics and mechanical dimensions. Ensure the TO-220 package matches your PCB footprint requirements. Check for RoHS compliance status if required by your manufacturing standards. Confirm the #T2F suffix corresponds to the desired reel or tube packaging format before ordering.
Selection Notes
Select this component when a 300V IGBT with 40A current capacity is required for high-speed switching applications. Consider the TO-220 package constraints for thermal dissipation and board space. Compare switching losses and saturation voltage against alternative Renesas IGBTs if specific performance metrics differ significantly for your design.
Part Context
This IGBT belongs to Renesas' portfolio of power devices intended for display panel driving and general power electronics. The RJP series typically targets applications demanding reliable switching performance at moderate voltages. It serves as a discrete solution for power stages where integrated modules are not feasible.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Renesas official cross-reference tools for compatible alternatives.
