RJP3082DPP-00#T2

$1.54

Description：HIGH SPEED IGBT
Series：*

SKU:aa2ea6e0e32b Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：HIGH SPEED IGBT
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RJP3082DPP-00#T2

Overview

The RJP3082DPP-00#T2 is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is designed for power conversion applications requiring fast switching characteristics. The device features a single IGBT configuration housed in a TO-220AB through-hole package. Key electrical specifications include a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 40 A. The component operates with a standard gate input type and supports a maximum junction temperature of 150°C.

Feature Summary

High-speed switching capability for efficient power conversion
Robust 600 V collector-emitter breakdown voltage rating
Standard gate input interface for straightforward driver integration
Through-hole TO-220AB packaging for reliable thermal management

Applications

Power conversion systems
Industrial motor drives
Inverter circuits

Procurement Notes

Verify the exact part number suffix, specifically the -00#T2 designation, to ensure compatibility with required packaging and manufacturing specifications. Confirm that the TO-220AB through-hole form factor aligns with the target PCB layout and assembly processes. Check for any specific handling requirements related to the semiconductor's sensitivity during installation.

Selection Notes

Select this component when a 600 V rated IGBT with a 40 A current capacity is required for high-speed switching applications. Ensure the design accommodates the TO-220AB through-hole mounting style and provides adequate heatsinking to maintain the junction temperature within the 150°C limit under expected load conditions.

Part Context

This part belongs to the RJP series of single IGBTs from Renesas Electronics. The series is characterized by high-speed performance suitable for demanding power electronics environments. The RJP3082DPP-00#T2 represents a specific variant optimized for through-hole assembly, distinguishing it from surface-mount alternatives within the broader product family.