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Product Detailed Parameters
- Description：IGBT 400V 15A
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The RJP4003ANS-00#Q1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a 400V collector-emitter voltage rating and is housed in an ultra-small VSON-8 package measuring 4.40 x 3 mm. The component is designed for high-efficiency switching applications, offering low on-state voltage drop characteristics typical of IGBT technology. It operates within standard industrial temperature ranges and complies with RoHS3 specifications, ensuring environmental safety for modern electronic assemblies.
Feature Summary
- N-channel IGBT configuration optimized for strobe flash applications
- Ultra-small VSON-8 surface-mount package design
- 400V blocking voltage capability for power switching
- RoHS3 compliant construction for environmental standards
Applications
- Strobe flash driver circuits
- High-voltage power switching modules
- Consumer electronics power management
- Industrial inverter systems
Procurement Notes
Verify the specific suffix #Q1 against official Renesas documentation to confirm compliance requirements and marking details. Confirm the active status of this part number through authorized distributors, as semiconductor availability fluctuates. Ensure the receiving facility handles electrostatic discharge precautions appropriate for sensitive MOS-gated devices during storage and assembly processes.
Selection Notes
Select this component when a compact form factor is required for 400V switching tasks. The VSON-8 package suits space-constrained designs compared to traditional leaded packages. Evaluate thermal dissipation capabilities relative to the application's duty cycle, as the small footprint limits heat spreading. Compare switching speeds and gate charge parameters against alternative IGBTs if high-frequency operation is critical for the system performance.
Part Context
This device belongs to Renesas' discrete power transistor portfolio, specifically targeting applications requiring robust voltage handling in minimal footprints. The IGBT technology combines the high-input impedance of MOSFETs with the low conduction loss of bipolar transistors. This hybrid approach makes it suitable for medium-power applications where efficiency and size are competing design constraints.
Replacement Considerations
Direct substitutes must match the 400V rating, N-channel polarity, and VSON-8 package dimensions. Verify pinout compatibility to ensure direct replacement without PCB redesign. Check equivalent on-state voltage and switching characteristics to maintain system efficiency. Consult Renesas for any updated versions or cross-reference lists provided in official datasheets.
