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The RJP6055DPP-90#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter voltage rating of 630V and a continuous collector current capacity of 40A. Designed for high-power switching applications, this component utilizes surface-mount packaging to facilitate integration into compact power electronics systems. The device is optimized for performance in demanding environments typical of plasma display technologies.
This component belongs to the family of discrete power semiconductors produced by Renesas. It serves as a critical switching element within power conversion stages, specifically targeting the high-frequency and high-voltage requirements found in legacy plasma display panel driving architectures. Its design focuses on reliability and thermal management within confined electronic assemblies.
Public confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Renesas cross-reference guides or datasheets for parameter-equivalent alternatives when sourcing replacements.