RJP6065DPN-P1#T2

RJP6065DPN-P1#T2

$2.48
  • Description:IGBT
  • Series:*

SKU:219a38e9dbb9 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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RJP6065DPN-P1#T2

Overview

The RJP6065DPN-P1#T2 is a silicon N-channel IGBT manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, featuring a low collector-to-emitter saturation voltage of 1.8 V typical at IC=40 A and VGE=15V. The device supports a gate-to-emitter voltage rating of ±30 V and utilizes lead-free plating with chip bonding technology.

Feature Summary

  • High-speed power switching capability
  • Low collector to emitter saturation voltage
  • Lead-free construction with chip bonding

Applications

  • Power Factor Correction (PFC)
  • Uninterruptible Power Supplies (UPS)
  • Solar Power Generation Inverters
  • Welding Equipment

Part Context

This component belongs to the RJP/H60F series of IGBTs recommended for frequencies between 50 to 100 kHz. These devices are part of Renesas' portfolio for inverter applications, often grouped with similar models like RJH60D1DPP-E0 for industrial power conversion systems.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific suffix are not available in verified documentation. Users should consult official Renesas resources for current alternative recommendations.

RJP6065DPN-P1#T2RJP6065DPN-P1#T2
$2.48
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