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The RJP6065DPN-P1#T2 is a silicon N-channel IGBT manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, featuring a low collector-to-emitter saturation voltage of 1.8 V typical at IC=40 A and VGE=15V. The device supports a gate-to-emitter voltage rating of ±30 V and utilizes lead-free plating with chip bonding technology.
This component belongs to the RJP/H60F series of IGBTs recommended for frequencies between 50 to 100 kHz. These devices are part of Renesas' portfolio for inverter applications, often grouped with similar models like RJH60D1DPP-E0 for industrial power conversion systems.
Publicly confirmed substitute part numbers for this specific suffix are not available in verified documentation. Users should consult official Renesas resources for current alternative recommendations.