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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220AB
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 40A
- Power - Max：178.5 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The RJP6085DPN-00#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 40 A. The device is housed in a TO-220AB through-hole package with three leads. Its maximum power dissipation is specified at 178.5 W, and it supports a maximum junction temperature of 150°C. The IGBT has standard input type characteristics, with a maximum collector-emitter saturation voltage of 3.5 V measured at a gate-emitter voltage of 15 V and a collector current of 40 A.
Feature Summary
- Standard N-channel IGBT configuration for general-purpose switching applications
- Through-hole mounting capability via TO-220AB package for robust mechanical attachment
- High thermal tolerance supporting operation up to 150°C junction temperature
Applications
- Switching mode power supplies
- Motor control drives
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix #T2 to confirm tube packaging format, as this affects handling procedures. Confirm component status, as official records indicate this part may be End-of-Life or Not For New Designs. Ensure compatibility with existing thermal management solutions designed for the TO-220AB footprint before procurement.
Selection Notes
Select this component when a 600V rated IGBT with 40A continuous current capacity is required for through-hole assembly. Evaluate the 3.5V saturation voltage at full load against system efficiency targets. Consider the 178.5W power dissipation limit relative to the available heatsinking area and ambient operating conditions to ensure safe junction temperatures are maintained.
Part Context
This IGBT belongs to the broader RJP series of power transistors from Renesas. It serves as a discrete switching element within power electronics architectures. The TO-220AB form factor distinguishes it from surface-mount alternatives, catering to designs requiring manual assembly or high-vibration resistance. It complements other Renesas power devices like MOSFETs in mixed-signal power stages.
Replacement Considerations
Check for direct pin-compatible substitutes within the same voltage and current class. Verify that any replacement maintains the TO-220AB package dimensions and thermal characteristics. Since the part status is listed as discontinued, identify equivalent components from current production lines that match the 600V/40A specifications.
