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Product Detailed Parameters
- Description：IGBT TRENCH 600V 80A TO-3PFM
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 40A
- Power - Max：45 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：74 nC
- Td (on/off) @ 25°C：53ns/90ns
- Test Condition：400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RJP60F5DPM-00#T1 is a single trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 80 A at 25°C. The device operates with a maximum power dissipation of 45 W and supports junction temperatures up to 150°C. Packaged in a TO-3PFM through-hole format, it exhibits a typical on-state collector-emitter voltage of 2.1 V under specified test conditions.
Feature Summary
- Utilizes trench gate technology for high-speed power switching capabilities
- Designed for robust thermal performance with a 150°C maximum junction temperature rating
- Provides standard input type configuration for straightforward driver integration
Applications
- Induction Heating (IH) Cookers
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify component authenticity and datasheet alignment prior to procurement. Confirm that the specific suffix matches the required electrical characteristics. Check for end-of-life notifications or product change notices affecting availability. Ensure storage conditions comply with moisture sensitivity level requirements. Validate supplier documentation against official Renesas records.
Selection Notes
Select this component for applications requiring 600V blocking capability and 80A current handling in a through-hole package. Consider the 45W power dissipation limit for thermal management design. Evaluate the 2.1V on-state voltage drop for efficiency calculations. Compare switching speeds against system requirements. Assess compatibility with existing PCB footprints for the TO-3PFM housing.
Part Context
This IGBT belongs to the RJP60 series from Renesas, designed for high-power industrial applications. It complements other variants like the RJP60V0DPM and RJH60D7DPM within the same family. These devices share similar packaging but differ in current ratings and switching characteristics. The series targets efficient power conversion in demanding environments.
Replacement Considerations
Direct substitutes include RJP60V0DPM-00#T1 and RJH60D7DPM-00#T1. Verify pinout compatibility and thermal resistance values. Ensure replacement parts meet the same 600V voltage rating. Check if alternative current ratings satisfy the circuit load requirements.
