RJP60V0DPM-00#T1

Overview

The RJP60V0DPM-00#T1 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 45 A at 25°C. The device exhibits a maximum on-state voltage drop of 2.1 V when driven at 15 V gate voltage with a 22 A collector current. Key switching parameters include a turn-on delay of 45 ns and a turn-off delay of 100 ns, measured under test conditions of 300 V, 22 A, 5 Ω load, and 15 V drive. The component has a maximum power dissipation of 40 W and supports junction temperatures up to 150°C. It utilizes a TO-3PFM through-hole package.

Feature Summary

• Utilizes trench gate technology for optimized switching performance and low conduction losses.
• Designed for high-voltage applications with a 600 V blocking capability.
• Features standard input type compatible with common gate driver circuits.

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supply (UPS) systems
• Solar power generation inverters
• Welding equipment

Procurement Notes

Verify the specific ordering suffix #T1 to confirm tube packaging configuration. Confirm RoHS3 compliance status as required by project specifications. Check for End-of-Life notifications or Product Change Notices regarding label updates or discontinuation dates before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a 600 V IGBT with moderate current handling up to 45 A. Ensure the thermal management system can dissipate up to 40 W of power. Verify that the gate drive circuit provides the necessary 15 V swing to achieve the specified 2.1 V saturation voltage. Consider the TO-3PFM package constraints for PCB layout and mounting torque requirements.

Part Context

This part belongs to the RJP60V0 series of trench-gate IGBTs from Renesas. It is specifically categorized for use in high-frequency power conversion topologies such as PFC and solar inverters. The device is designed to operate efficiently in the 50 kHz to 100 kHz range, though it lacks short-circuit ruggedness guarantees compared to other series in the lineup.

Replacement Considerations

Direct replacements within the same family include the RJH60D7DPM-00#T1, which offers higher current capacity (90 A) but different switching characteristics. Other alternatives in the RJP/H60Fx or RJP/H60Dx series may be considered if pin compatibility and electrical ratings align with the design requirements.