ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N CH IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJP63F3DPP-Z0#T2 is a high-voltage N-channel Power MOSFET manufactured by Renesas Electronics Corporation. It utilizes trench gate technology to achieve low on-resistance and fast switching performance. The device is housed in a TO-220FP-3 package, suitable for through-hole mounting. Key electrical parameters include a drain-source breakdown voltage (V_DSS) of 600 V and a continuous drain current (I_D) of 15 A at 25°C. The maximum drain-source on-resistance (R_DS(on)) is specified as 300 mΩ at a gate-source voltage of 10 V. The component supports a maximum junction temperature of +175°C and features a total gate charge (Q_g) of 48 nC.
Feature Summary
- High voltage capability with 600 V drain-source breakdown voltage
- Low conduction losses due to optimized trench gate structure
- Fast switching characteristics with reduced gate charge
- Robust thermal performance supporting high junction temperatures
Applications
- Industrial motor drives and inverters
- High-frequency power supply circuits
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix Z0#T2 against official Renesas documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with RoHS directives and check for any recent product change notices that may affect pinout or material composition before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring 600 V blocking capability with moderate current handling up to 15 A. Consider the 300 mΩ on-resistance for efficiency calculations in hard-switching applications. Evaluate thermal management requirements given the TO-220FP-3 package's thermal resistance characteristics.
Part Context
This part belongs to Renesas' high-voltage MOSFET portfolio, specifically designed for power conversion applications. It complements other devices in the RJP series, offering a balance between voltage rating and conduction efficiency. The TO-220FP-3 package provides a cost-effective solution for medium-power designs compared to surface-mount alternatives.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Potential replacements must match the 600 V / 15 A / 300 mΩ specification profile and TO-220FP-3 footprint. Verify parameter equivalence for R_DS(on), Q_g, and thermal resistance before implementation.
