RJP63K2DPP-MZ#T2

Single Bipolar Transistors Overview

The RJP63K2DPP-MZ#T2 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It utilizes trench gate and thin wafer technology to achieve high-speed switching capabilities. The device features a collector-to-emitter saturation voltage of 1.9 V typical, ensuring efficient power handling. Key electrical parameters include a collector-to-emitter voltage rating of 630 V, a gate-to-emitter voltage limit of ±30 V, and a continuous collector current capacity of 35 A.

Single Bipolar Transistors Feature Summary

• Utilizes trench gate and thin wafer technology for high-speed performance
• Features low collector-to-emitter saturation voltage for efficiency
• Designed as a robust silicon N-channel IGBT

Single Bipolar Transistors Applications

• High-speed power switching applications
• Industrial motor control systems
• Power supply units requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the specific suffix #T2 against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with TO-220FL mounting requirements. Cross-reference datasheet revisions to confirm thermal characteristics match design constraints before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a 630V blocking capability and 35A continuous current are required in a compact form factor. The low saturation voltage makes it suitable for applications prioritizing conduction loss reduction. Consider thermal management solutions compatible with the TO-220FL package dimensions.

Single Bipolar Transistors Part Context

This part belongs to the G6H-II series of IGBTs from Renesas, characterized by advanced trench gate architecture. It serves as a discrete power semiconductor solution designed for medium-power industrial applications. The series emphasizes reliability and switching speed improvements over previous generations.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the RJP63K2DPP-M0 variant within the same product family. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' 630V, 35A IGBT offerings.