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Product Detailed Parameters
- Description：MOSFET N-CH 650V 11.5A TO220-3
- Series：-
- Mfr：Rectron USA
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：101W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The RM12N650T2 is an N-Channel Super Junction Power MOSFET manufactured by Rectron. It utilizes Trench technology to achieve low on-resistance and fast switching capabilities. The device features a TO-263 package and is designed for high-efficiency power conversion applications. Key electrical parameters include a drain-source voltage of 650V, a continuous drain current of 12A at 25°C, and a maximum gate-source voltage of ±20V. The component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Super Junction structure provides superior figure of merit compared to conventional planar MOSFETs
- Low gate charge reduces switching losses and improves thermal performance
- Enhanced dv/dt rating prevents false turn-on in hard-switching applications
Applications
- High-frequency DC-DC converters
- Power factor correction (PFC) circuits
- Motor control systems
Procurement Notes
Verify the specific ordering suffix 'T2' against the manufacturer's official documentation to confirm the exact packaging configuration. Ensure that the requested part number matches the required lead time and production cycle provided by authorized distributors. Confirm RoHS compliance status as per the latest datasheet revision before finalizing procurement orders.
Selection Notes
Select this component based on its 650V breakdown voltage and 12A current handling capability suitable for medium-power designs. Evaluate the thermal resistance characteristics relative to the intended heatsinking strategy. Consider the gate charge specifications when designing drive circuits to optimize switching speed and minimize power dissipation during transitions.
Part Context
This model belongs to the RM12N650 series from Rectron, which includes variants such as RM12N650HD and RM12N650TI. These parts share similar electrical characteristics but differ primarily in packaging and marking conventions. The series represents Rectron's implementation of Super Junction technology for improved efficiency in power electronics.
Replacement Considerations
Direct substitutes may include other 650V N-Channel Super Junction MOSFETs with comparable Rds(on) and Qg values. Verify pinout compatibility and thermal pad dimensions before substitution. Cross-reference absolute maximum ratings to ensure equivalent or superior performance margins.
