RN731VFHTE-17

RF Diode Overview

The RN731VFHTE-17 is a PIN diode manufactured by Rohm Semiconductor, designed for high-frequency applications. It features a single configuration in an SOD-323FL (SC-90A) surface-mount package with two terminals. Key electrical parameters include a reverse voltage of 50V and a forward current rating of 50mA. The device exhibits low capacitance of 0.4pF at 35V and a forward resistance of 7Ω at 10mA. Operating temperatures range from -55°C to 150°C storage, with a junction temperature up to 125°C. The component is supplied in tape-and-reel packaging with a standard quantity of 3000 units per reel.

RF Diode Feature Summary

• Small-sized mold type construction
• Low forward impedance for high-frequency performance
• Low capacitance characteristics

RF Diode Applications

• High-frequency switching circuits
• RF signal processing
• Attenuator applications

RF Diode Procurement Notes

Verify the specific suffix FHTE against official Rohm documentation to confirm exact packaging and material specifications. Ensure compatibility with existing PCB footprints for the SOD-323FL package. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement plans.

RF Diode Selection Notes

Select this component when low capacitance and small physical size are critical for high-frequency circuit designs. Compare the 50V reverse voltage and 50mA forward current limits against circuit requirements. Evaluate the thermal management needs given the 125°C junction temperature limit.

RF Diode Part Context

This part belongs to Rohm's RN731V series of PIN diodes. These components are engineered for miniaturization while maintaining efficient RF performance. The series targets portable electronics and communication devices requiring compact, high-speed switching elements.

RF Diode Replacement Considerations

Check for direct pin-compatible alternatives within the same family or from other manufacturers if supply constraints arise. Verify that substitute parts meet the same 0.4pF capacitance and 7Ω resistance specifications for equivalent RF behavior.