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RQ3E180AJTB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 18A/30A 8HSMT. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RQ3E180AJTB
- Description：MOSFET N-CH 30V 18A/30A 8HSMT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4290 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-HSMT (3.2x3)
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for RQ3E180AJTB
Single FETs, MOSFETs Overview
The RQ3E180AJTB is an N-channel middle power MOSFET manufactured by ROHM Semiconductor. It features a Drain-Source voltage (VDSS) of 30V and a continuous drain current (ID) of 18A at Ta=25°C, with a maximum rating of ±30A at Tc=25°C. The device exhibits a low static drain-source on-state resistance (RDS(on)) of 4.5mΩ typ at VGS=4.5V and ID=18A. Key electrical parameters include a total gate charge (Qg) of 39nC, a turn-on delay time of 28ns, and a fall time of 160ns. Power dissipation is rated at 2W in ambient conditions and 30W when mounted to a case at 25°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient switching performance
- Compact HSMT8 surface mount package design
- Lead-free plating compliant with RoHS standards
Single FETs, MOSFETs Applications
- Switching applications
- Power supply circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and absolute maximum ratings before integration. Confirm thermal management requirements against the junction-to-ambient resistance values provided in the official documentation. Ensure ESD protection circuits are considered during design due to potential chip aging under large electrified environments as noted by the manufacturer.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 30V N-channel MOSFET with moderate current handling capabilities. Evaluate the thermal constraints carefully, as the ambient power dissipation is limited to 2W without significant heatsinking. The low gate charge supports efficient drive requirements for standard logic-level or dedicated gate driver interfaces.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's middle power MOSFET lineup, designed specifically for compact surface-mount implementations. The HSMT8 package allows for high-density PCB layouts while maintaining necessary thermal characteristics for general-purpose switching tasks within consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 30V VDSS, 18A ID, and HSMT8 footprint specifications to maintain circuit compatibility.
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