RQ3E180BNTB

$0.52

Description：MOSFET N-CHANNEL 30V 39A 8HSMT
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f3dea72cf7b6 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RQ3E180BNTB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CHANNEL 30V 39A 8HSMT. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RQ3E180BNTB

Description：MOSFET N-CHANNEL 30V 39A 8HSMT
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：37 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 20W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-HSMT (3.2x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for RQ3E180BNTB

RQ3E180BNTB

Single FETs, MOSFETs Overview

The RQ3E180BNTB is a single N-channel MOSFET manufactured by ROHM Semiconductor, housed in an HSMT8 surface-mount package. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of ±39A at 25°C case temperature. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 3.9mΩ at VGS=10V and 5.2mΩ at VGS=4.5V. Total gate charge (Qg) is typically 72nC at VGS=10V and 37nC at VGS=4.5V. Power dissipation reaches 20W at the case and 2.0W at ambient. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient power switching
High power capability within the HSMT8 package
Lead-free plating compliant with RoHS standards
Halogen-free construction

Single FETs, MOSFETs Applications

General switching applications
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB against the manufacturer's latest documentation to confirm packaging details such as tape width and reel size. Confirm that the component meets RoHS and halogen-free requirements if mandated by your design specifications. Ensure ESD protection measures are implemented during handling due to the sensitivity of the MOSFET structure.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for high-current switching tasks. The HSMT8 package provides a balance between thermal performance and board space efficiency. Verify that the drive voltage aligns with the specified RDS(on) characteristics, particularly for 4.5V or 10V logic levels.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's middle power MOSFET lineup designed for general electronic equipment. It utilizes silicon technology and is intended for standard operating conditions. The product is not recommended for automotive use or specific high-reliability applications without prior consultation with the manufacturer.

Single FETs, MOSFETs Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices based solely on electrical parameters.