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RQ5E025SNTL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 2.5A TSMT3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RQ5E025SNTL
- Description：MOSFET N-CH 30V 2.5A TSMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.1 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：165 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSMT3
- Package / Case：SC-96
Single FETs, MOSFETs datasheet and documents for RQ5E025SNTL
Single FETs, MOSFETs Overview
The RQ5E025SNTL is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 2.5A. The device exhibits a low on-resistance of 70 mOhms at a gate-source voltage of 4.0V, with a typical gate charge of 2.9 nC. It operates within a temperature range of -55°C to +150°C and dissipates up to 1W of power. The component is housed in a compact SOT-346-3 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient power switching
- Integrated gate-source protection diode
- Compact SOT-346-3 surface-mount packaging
Single FETs, MOSFETs Applications
- General purpose switching circuits
- Low voltage power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS and REACH standards as indicated in the manufacturer's datasheet. Confirm that the component meets the required thermal and electrical ratings for the intended application environment before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a small form factor with moderate current handling capabilities. The low gate charge facilitates fast switching speeds, reducing dynamic losses. Verify that the drive voltage aligns with the specified threshold and on-resistance characteristics to ensure optimal performance and thermal stability.
Single FETs, MOSFETs Part Context
This part belongs to ROHM's lineup of small signal MOSFETs designed for surface-mount technology. It is engineered to provide reliable performance in space-constrained designs while maintaining low conduction losses. The series is suitable for various consumer and industrial electronics where efficiency and size are critical factors.
Single FETs, MOSFETs Replacement Considerations
Consult official ROHM documentation for verified substitute part numbers. Cross-reference pinouts, electrical parameters, and package dimensions to ensure compatibility. Do not assume interchangeability without validating technical specifications against the original component requirements.
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