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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 2A 6HWSON
- Series：-
- Mfr：Renesas
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Rds On (Max) @ Id, Vgs：225mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：200pF @ 10V
- Power - Max：1.5W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-HWSON (3x3)
- Grade：-
- Qualification：-
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Overview
The RQM2201DNS#P0 is a silicon N-channel MOSFET power switching array manufactured by Renesas Electronics. It is housed in a surface-mount 6-HWSON (3x3) package and is currently classified as an obsolete product. The device features a maximum voltage rating of 60V and supports a continuous current of 2A. Thermal performance includes a maximum power dissipation of 1.5W at ambient temperature. Electrical characteristics specify a maximum on-resistance of 225mOhm when tested at a drain current of 1A and a gate-source voltage of 4.5V.
Feature Summary
- Utilizes silicon N-channel technology for power switching applications
- Configured as a dual MOSFET array within a compact surface-mount footprint
- Designed for low on-resistance to minimize conduction losses
Applications
- General purpose power switching circuits
- Load management in consumer electronics
- Interface logic level translation
Procurement Notes
This component is officially listed as obsolete by the manufacturer. Procurement requires verification of availability through secondary market distributors or authorized surplus channels. Buyers must confirm the physical condition of the inventory and validate authenticity against original Renesas documentation before acquisition, as supply chain status may vary across different suppliers.
Selection Notes
Engineers should evaluate alternative active components from the same family or newer generations due to the obsolete status of this specific part number. Selection criteria must prioritize compatible package dimensions, electrical ratings, and thermal characteristics to ensure seamless integration into existing designs without requiring significant layout modifications.
Part Context
The RQM2201DNS#P0 belongs to Renesas' discrete semiconductor portfolio, specifically categorized under MOSFET arrays. This series targets applications requiring efficient power control in small form factors. The HWSON package provides thermal efficiency suitable for space-constrained printed circuit board designs common in modern electronic devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult official Renesas replacement guides or contact technical support directly for validated cross-reference data.
