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RS6L120BHTB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 60V 150A, HSOP8, POWER MOSFE. Review the specifications below when checking this part for your BOM.
The RS6L120BHTB1 is a single N-channel enhancement mode power MOSFET manufactured by ROHM Semiconductor. It features a 60V drain-source breakdown voltage (Vdss) and supports high continuous current capabilities, rated at 150A at ambient temperature and 120A at case temperature. The device utilizes an 8-pin HSOP surface-mount package designed for efficient thermal management. Key electrical characteristics include a low on-resistance of 3.0 mΩ at Vgs=10V, ensuring minimal conduction losses. The component operates within a junction temperature range of -55°C to +150°C and exhibits fast switching times with rise and fall times in the nanosecond range.
Verify the specific suffix BHTB1 against official ROHM documentation to confirm pinout and thermal pad configuration. Ensure compatibility with existing PCB footprints for the 8-HSOP package. Check for RoHS compliance status in the latest datasheet revision before integration into regulated products.
Select this component when high current density and low Rds(on) are required in a small form factor. Compare thermal resistance values against system heat dissipation requirements. Ensure gate drive voltage aligns with the specified threshold and full enhancement levels for optimal performance.
This part belongs to the ROHM RS6 series of N-channel MOSFETs, which are engineered for high-current applications. The series emphasizes low on-resistance and fast switching speeds. The RS6L120BHTB1 variant specifically targets designs requiring robust performance in compact surface-mount configurations.
Consult ROHM's official cross-reference guides for verified substitutes. Ensure any replacement matches the 60V rating, 8-HSOP package, and equivalent or superior current and thermal specifications.
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