Single FETs, MOSFETs RTQ035N03HZGTR product image

RTQ035N03HZGTR

$0.92
  • Description:MOSFET N-CH 30V 3.5A TSMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3c8f00375376 Category: Brand:

  
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RTQ035N03HZGTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 3.5A TSMT6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RTQ035N03HZGTR

  • Description:MOSFET N-CH 30V 3.5A TSMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:54mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:285 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):950mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TSMT6 (SC-95)
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for RTQ035N03HZGTR

RTQ035N03HZGTR

Single FETs, MOSFETs Overview

The RTQ035N03HZGTR is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 3.5 A. The device exhibits a typical on-resistance (Rds(on)) of 0.055 Ω at Vgs = 2.5 V, with lower values of 0.04 Ω at 4 V and 0.038 Ω at 4.5 V. Gate charge (Qg) is typically 4.6 nC. Power dissipation is rated at 1.25 W. Operating temperature ranges from -55°C to +150°C. It is housed in a SOT-457T (TSMT6) surface-mount package and holds AEC-Q101 automotive qualification.

Single FETs, MOSFETs Feature Summary

  • Integrated gate-source protection diode for enhanced circuit reliability.
  • Low on-resistance optimized for low-voltage drive applications.
  • Automotive-grade qualification ensuring robust performance under varying conditions.

Single FETs, MOSFETs Applications

  • Automotive switching circuits
  • General-purpose signal switching
  • Low-voltage power management

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'HZGTR' against the official ROHM datasheet to confirm the tape-and-reel packaging format and lead-free plating specifications. Ensure the design accommodates the TSMT6 footprint dimensions and thermal requirements for the specified power dissipation rating. Confirm AEC-Q101 compliance if the application mandates automotive grade standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with low gate charge and high efficiency at low drive voltages. The integrated G-S protection diode simplifies circuit topology by reducing external component count. Verify that the 30V breakdown voltage and 3.5A current capacity align with the system's peak load and transient requirements.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's RSQ/RTQ series of small-signal MOSFETs designed for automotive and industrial applications. It utilizes silicon technology and is packaged in the SOT-457T form factor, which is equivalent to the JEITA SC-95 standard. The series emphasizes low on-resistance and fast switching characteristics suitable for modern electronic control units.

Single FETs, MOSFETs Replacement Considerations

The RTQ035N03FRA is listed as a similar level replacement with identical pinout and package. Verify electrical parameter equivalence before substitution.

RTQ035N03HZGTRRTQ035N03HZGTR
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