RU1C002ZPTCL

Single FETs, MOSFETs Overview

The RU1C002ZPTCL is a single P-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor using silicon technology. It features a compact SOT-323FL-3 (UMT3F) surface-mount package designed for low-power switching applications. Key electrical specifications include a drain-source breakdown voltage of 20 V and a continuous drain current of 200 mA at 25°C. The device exhibits a maximum on-resistance of 1.2 Ohms when driven at 4.5 V, with a gate-source threshold voltage of 1 V. It supports a maximum power dissipation of 150 mW and operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Optimized for low-voltage drive applications with a 1.2 V gate threshold voltage.
• Compact UMT3F surface-mount package suitable for space-constrained designs.
• Enhancement mode operation providing high input impedance and fast switching capabilities.

Single FETs, MOSFETs Applications

• Battery protection circuits in portable electronic devices
• Load switch management for low-power consumer electronics
• Voltage regulation stages in battery-powered equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel configuration matches your assembly requirements. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the exact part number with authorized distributors to avoid counterfeit components. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to maintain device reliability during soldering processes.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a small footprint and efficient switching at low voltages. The 1.2 Ohm on-resistance at 4.5 V drive makes it suitable for moderate current loads where power efficiency is critical. Consider the 200 mA current limit when designing for peak load scenarios. The wide operating temperature range ensures stability in diverse environmental conditions compared to standard commercial grade alternatives.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's discrete semiconductor portfolio, specifically within the MOSFET category. It complements other low-voltage logic-level transistors designed for modern portable electronics. The UMT3F package is commonly used in smartphones, tablets, and IoT devices where board space is limited. It represents a solution for managing power distribution in systems powered by single-cell lithium-ion or lithium-polymer batteries.

Single FETs, MOSFETs Replacement Considerations

The BD5227G-1 is listed as a similar level replacement with the same SSOP5 package type. Verify pin compatibility and electrical parameters before substitution. Check if the alternative meets the specific 1.2 V drive requirement and current handling needs of the original design.