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RV8C010UNHZGG2CR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 20V 1A DFN1010-3W. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for RV8C010UNHZGG2CR
- Description：MOSFET N-CH 20V 1A DFN1010-3W
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：470mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W
- Operating Temperature：150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN1010-3W
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for RV8C010UNHZGG2CR
Single FETs, MOSFETs Overview
The RV8C010UNHZGG2CR is an N-channel small signal MOSFET from ROHM Semiconductor, housed in a leadless ultra-small DFN-3 package. It features a drain-source voltage rating of 20V and a continuous drain current capacity of 1A. The device utilizes an exposed drain pad for superior thermal conduction and supports low-voltage drive conditions at 1.2V and 1.5V gate-source voltages.
Single FETs, MOSFETs Feature Summary
- Leadless ultra-small package design with exposed drain pad for excellent thermal dissipation
- Capable of operation under low gate-drive voltage conditions
- Constructed using MOSFET technology for efficient switching performance
Single FETs, MOSFETs Applications
- Consumer electronics portable devices
- Automotive xEV main inverters
- Automotive bi-directional onboard chargers
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix GG2CR against official ROHM documentation to confirm exact tape-and-reel packaging specifications and lot traceability requirements. Ensure compatibility with automated surface-mount assembly processes given the leadless DFN form factor. Cross-reference RoHS compliance status with current regulatory standards for the target deployment region before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when space constraints require a leadless ultra-small footprint combined with robust thermal management capabilities via an exposed pad. It is suitable for applications requiring 20V blocking capability and 1A current handling driven by low logic-level signals. Consider its automotive qualification if deploying in xEV or onboard charger environments where reliability under extreme conditions is mandatory.
Single FETs, MOSFETs Part Context
This part belongs to the ROHM RV8 series of small signal MOSFETs, which are engineered for high installation reliability and miniaturization. The series employs proprietary wettable flank forming technology to ensure consistent soldering quality for bottom electrode types, facilitating easy visual inspection by automatic testing machines during manufacturing.
Single FETs, MOSFETs Replacement Considerations
Consult official ROHM substitution guides for verified equivalents. Generic cross-references may not match the specific wettable flank package geometry or automotive-grade reliability standards required for xEV applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
